Self-aligned contacts with gate overlapped lightly doped drain (

Details Self-aligned contacts with gate overlapped lightly doped drain ( Self-aligned contacts with gate overlapped lightly doped drain (

1991-10-31

1994-08-23

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437186, 437189, 437192, 437193, 437200, H01L 21336, H01L 2128

Patent

active

053407610

ABSTRACT:
In a method for producing a transistor with an overlapping gate region, a gate region is placed on a substrate between two source/drain regions. Spacers are placed around the gate region. The spacers are formed of dielectric material. A thin layer of polysilicon is deposited over the two source/drain regions and over electrically insulating regions adjacent to the two source/drain regions. Portions of the thin layer of polysilicon are oxidized to electrically isolate the two source/drain regions. A metal-silicide layer is formed on the portions of the thin layer of polysilicon which are not oxidized. The metal-silicide layer is connected to a metal layer. The electrical contact of the metal-silicide layer and the metal layer is over an electrically insulating layer.

REFERENCES:
patent: 4127931 (1978-12-01), Shiba
patent: 4285117 (1981-08-01), Heeren
patent: 4352238 (1982-10-01), Shimbo
patent: 4506437 (1985-03-01), Godejahn, Jr.
patent: 4740484 (1988-04-01), Norstrom et al.
patent: 5053849 (1991-10-01), Izawa et al.
J. E. Moon, et al., "A New LDD Structure: Total Overlap with Polysilicon Spacer (TOPS)", IEEE Electronic Device Letters, May 1990, pp. 221-223.
T. Y. Huang: "A novel SubMicron LDD Transistor with Inverse-T Gate Structure", IEDM, 1986, pp. 742-745.
R. Izawa, et al., "The Impact of Gate-Drain Overlapped LDD(GOLD) For Deep SubMicron VLSIs", IEDM, 1987, pp. 38-41.

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