Self-aligned contacts for bipolar process

Details Self-aligned contacts for bipolar process Self-aligned contacts for bipolar process

1987-06-15

1988-06-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437187, 437240, 437982, 148DIG10, 148DIG133, 148DIG134, 156653, H01L 21283

Patent

active

047525916

ABSTRACT:
A process for manufacturing a bipolar semiconductor device having self-aligned contact regions. The process avoids the need for a masking step for the application of interconnecting contacts by providing a dielectric material having a low melting point over the emitter region of the semiconductor. The dielectric material is heated to its melting point such that it covers and encapsulates the emitter. Conductive contact material is then subsequently provided using the self-alignment feature of the melted dielectric which isolates the base from the contacts.

REFERENCES:
patent: 3925572 (1975-12-01), Naber
patent: 4157269 (1979-06-01), Ning et al.
patent: 4279671 (1981-07-01), Kamatsu
patent: 4299862 (1981-11-01), Donley
patent: 4364165 (1982-12-01), Dickman et al.
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 4577394 (1986-03-01), Peel

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