Self-aligned contact studs for semiconductor structures

Details Self-aligned contact studs for semiconductor structures Self-aligned contact studs for semiconductor structures

1991-10-29

1993-06-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257412, 257752, 257763, H01L 29600, H01L 29620

Patent

active

052162826

ABSTRACT:
A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having an alignment structure, which includes a sidewall, and the semiconductor structure formed thereon, forming a sidewall spacer contiguous with the semiconductor structure and the sidewall of the alignment structure, depositing an insulating layer contiguous with the sidewall spacer so as to insulate the semiconductor structure, etching the sidewall spacer selectively to the sidewall of the alignment structure, the semiconductor structure and the insulating layer for forming a contact window opening for allowing access to the semiconductor structure, and backfilling the contact window opening with a conductive material so as to contact the semiconductor structure for forming the stud.

REFERENCES:
patent: 4476482 (1984-10-01), Scott et al.
patent: 4878105 (1989-10-01), Hirakawa et al.
patent: 4925807 (1990-05-01), Yoshikawa
patent: 4980752 (1990-12-01), Jones, Jr.
patent: 5043786 (1991-08-01), Desilets et al.

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