Self-aligned contact studs for semiconductor structures

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257384, H01L 2952, H01L 2954

Patent

active

053529278

ABSTRACT:
A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having an alignment structure, which includes a sidewall, and the semiconductor structure formed thereon, forming a sidewall spacer contiguous with the semiconductor structure and the sidewall of the alignment structure, depositing an insulating layer contiguous with the sidewall spacer so as to insulate the semiconductor structure, etching the sidewall spacer selectively to the sidewall of the alignment structure, the semiconductor structure and the insulating layer for forming a contact window opening for allowing access to the semiconductor structure, and backfilling the contact window opening with a conductive material so as to contact the semiconductor structure for forming the stud.

REFERENCES:
patent: 4837609 (1989-06-01), Gurvitch et al.
patent: 4939154 (1990-07-01), Shimbo
patent: 4960723 (1990-10-01), Davies
patent: 5057902 (1991-10-01), Haskell et al.
patent: 5132755 (1992-07-01), Ueno
patent: 5136533 (1992-08-01), Harari

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