Self-aligned contact process

Details Self-aligned contact process Self-aligned contact process

1994-05-24

1995-01-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437 52, 437 60, 437919, H01L 2144

Patent

active

053786548

ABSTRACT:
A method of forming a self-aligned contact on a device including a semiconductor substrate comprises the steps of forming a gate oxide layer on the substrate, forming a gate electrode layer on the gate oxide layer, forming a stacked dielectric structure stacked on the gate electrode layer, and then patterning the stacked dielectric structure and the gate electrode layer, forming a dielectric layer blanketing the device, forming a first mask over the dielectric layer, the first mask covering a masked region, and then etching the dielectric layer through the mask to form a self-aligned contact opening into the dielectric layer leaving a first dielectric spacer adjacent to the stacked gate electrode and leaving the masked region covered by the remainder of the dielectric layer, removing the first mask, deposition of a second electrode layer, then forming a second mask and patterning the electrode layer by etching through the second mask, thereby forming a self-aligned contact structure in the opening.

REFERENCES:
patent: 4766006 (1988-08-01), Gaczi
patent: 5037777 (1991-08-01), Mele et al.
patent: 5066606 (1991-11-01), Lee
patent: 5082797 (1992-01-01), Chan et al.
patent: 5116776 (1992-05-01), Chan et al.
patent: 5149668 (1992-09-01), Rhodes et al.
patent: 5155056 (1992-10-01), Jeong-Gyoo

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