Self-aligned contact process

Details Self-aligned contact process Self-aligned contact process

1994-08-19

1996-03-19

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437190, 437984, H01L 21768

Patent

active

055003826

ABSTRACT:
A method for forming a self-aligned contact utilizes a thin insulating layer formed on the upper surface of a conductive layer. A barrier layer is deposited over the insulating layer, and gate electrodes are then defined. Sidewall spacers are formed along the vertical sidewalls of the gate electrodes. During formation of the sidewall spacers the barrier layer protects the gate electrodes. A second insulating layer is then deposited and a via is opened to the substrate. A contact can now be created by depositing conductive material into the via.

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patent: 4855798 (1989-08-01), Imamura et al.
patent: 4922311 (1990-05-01), Lee et al.
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5043790 (1991-08-01), Butler
patent: 5075762 (1991-12-01), Kondo et al.
Wolf, "Silicon Processing for the VLSI Era", 1986, pp. 539-546.

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