Self-aligned contact for MOS processing

Details Self-aligned contact for MOS processing Self-aligned contact for MOS processing

1987-05-12

1989-01-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437240, 437247, 437982, 148DIG133, 156653, 156657, 357 231, H01L 21302

Patent

active

047957182

ABSTRACT:
A process for manufacturing an insulated gate field effect semiconductor device having self-aligned contact regions. The process avoids the need for a masking step for the application of interconnecting contacts by providing a dielectric material having a low melting point over the gate region of the semiconductor. The dielectric material is heated to its melting point such that it covers and encapsulates the gate. Contact material is then subsequently provided using the self-alignment feature of the melted dielectric which isolates the gate from the contacts.

REFERENCES:
patent: 3925572 (1975-12-01), Naber
patent: 4157269 (1979-06-01), Ning et al.
patent: 4279671 (1981-07-01), Komatsu
patent: 4299862 (1981-11-01), Donley
patent: 4364165 (1982-12-01), Dickman et al.
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 4577394 (1986-03-01), Peel

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