Self-aligned contact diffusion barrier method

Details Self-aligned contact diffusion barrier method Self-aligned contact diffusion barrier method

1993-03-29

1995-02-14

Maples, John S.

Fishing, trapping, and vermin destroying

437195, 437200, 437235, H01L 21441

Patent

active

053895754

ABSTRACT:
A method of forming a contact diffusion barrier in a thin geometry integrated circuit device involves implanting a second material into a low resistivity material that overlies the semiconductor to which contact is desired. The low resistivity and implanted materials are selected to intereact with each other and form a contact diffusion barrier. Both materials may include transition metals, in which case the diffusion barrier is a composite transition metal. Alternately, the low resistivity material may include a transition metal, while implantation is performed with nitrogen. The implantation is performed by plasma etching, preferably with active cooling, which can be combined in a continuous step with the etching of the contact opening. The resulting contact diffusion barrier is self-aligned with the contact opening, and is established only in the immediate vicinity of the opening.

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