Self-aligned conducting etch stop for interconnect patterning

Details Self-aligned conducting etch stop for interconnect patterning Self-aligned conducting etch stop for interconnect patterning

1992-09-04

1993-10-26

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437194, 437195, 156628, 156654, 156656, H01L 2144

Patent

active

052565971

ABSTRACT:
Process for fabricating an interconnect for a semiconductor structure, includes using a conductive etch stop layer. The conductive etch stop layer has etch selectivity to conductive interconnect material for protecting underlying features during etching. An interconnect is formed from the conductive interconnect material, and the conductive etch stop layer is caused to react with the interconnect for forming a metal alloy which electrically connects the interconnect with a structure.

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