Self-aligned complementary HFETS

Details Self-aligned complementary HFETS Self-aligned complementary HFETS

1993-06-01

1995-05-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 57, 437133, 437912, 437192, 148DIG53, 148DIG72, H01L 21265

Patent

active

054119030

ABSTRACT:
Self-aligned HFETS are fabricated by providing a semi-insulating substrate and forming a low bandgap III-V semiconductor layer thereon. A first dielectric layer of a first dielectric material is formed on the III-V layer and first and second openings are formed through the first dielectric layer and the III-V layer. After forming dielectric spacers of a second dielectric material on the sidewalls of the first and second openings, gates are formed therein. The first dielectric layer is subsequently removed and source and drain regions are formed in the III-V layer and substrate adjacent to each of the gates. The formation of the source and drain regions is self-aligned to the gates. After forming isolation regions between devices, ohmic contacts to the source and drain regions, all being of a like material, are formed. This formation is also self-aligned to the gates.

REFERENCES:
patent: 4359816 (1982-11-01), Abbas et al.
patent: 4378627 (1983-04-01), Jambotkar
patent: 4472872 (1984-09-01), Toyoda et al.
patent: 4615102 (1986-10-01), Suzuki et al.
patent: 4635343 (1987-01-01), Kuroda
patent: 4729000 (1988-03-01), Abrokwah
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4830980 (1989-05-01), Hsieh
patent: 4849368 (1989-07-01), Yamashita et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4892843 (1990-01-01), Schmitz et al.
patent: 4963511 (1990-10-01), Smith
Tennant et al., "Electron beam fabrication of high performance InGaAs/InAlAs heterojunction insulated gate field effect transistors with submicron refractory airbridge gates", J. Vac. Sci. Technol. B6(6), Nov./Dec. 1988, pp. 1820-1823.
Ruden et al. "High Performance Complementary Logic Based OnGaAs/InGaAs/AlGaAs HIGFETs*", IEDM 1989, pp. 117-119.
Kiehl et al., "Complementary P. and N. Channel Quantum-Well Mi.sup.3 SFET's", IEDM, 1988, pp. 684-687.
Baek et al., "New Mechanism of Gate Curent in Heterostructure Insulated Gate Field-Effect Transistors", IEEE EDL-7, No. 9 Sep. 1986, pp. 519-521.
Ferer et al., "Gate-Length Dependence of DC and Microwave Properties of Submicrometer In.sub.0.53 Ga.sub.0.47 As HIGFET's", IEEE EDL Oct. 2 Feb. 1989, pp. 70-72.
Abrokwah et al., "High-Performance Self-Aligned (Al.Ga) As/(InGa) As Prandomorphic HIGFET's", IEEE EDL Oct. 5, May 1989, pp. 225-226.
Ruden et al., "Quantum-Well p. Channel AlGaAs/InGaAs/GaAs Heterostructure Insulated-Gate Field-Effect Transistors", IEEE Transactions on Electron Devices, 36/11, Nov. 1989, pp. 2371-2378.
Matsumoto et al., "Complementary GaAs SIS FET Invester Using Selective Crystal Regrowth Technique by MBE", IEEE EDL 7/3, 3/86 pp. 182-184.
Shinichiro Takatani et al., "i-AlGaAs
-GaAs Doped-channel Heterostructure Insulated Gate FET(Dc-HIGFET) with n.sup.+ GaAs selective gram by MDCVD", IEDM, 1988, pp. 692-695.
Birbas et al., "Low Frequency Noise in p-Channel Heterostructure Insulated-Gate Field-Effect Transistors (HIGFET's) at 77k and Drain Current of 1 .mu.a", IEEE EDL Oct. 7 Jul. 1989, pp. 316-318.
Daniels et al., "Complementary Heterostructure Insulated Gate FET Circuits for High-Speed, Low Power VLSI", IEDM, 1986, pp. 448-451.
Cirillo et al., "Complementary Heterostructure Insulated Gate Field Effect Transistor (HIGFET's)", IEDM, 1985, pp. 317-320.
Mizutani et al., "Circuit Performance of Complementary Heterostructure MisFET inverter using High Mobility 2DEG and 2DHG", IEEE GaAs IC Symposium, 1986, pp. 107-110.

Affiliated with

Also associated with

Rating

Self-aligned complementary HFETS does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned complementary HFETS, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned complementary HFETS will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1136620