Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2007-04-10
2007-04-10
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S565000
Reexamination Certificate
active
10418395
ABSTRACT:
The invention relates to a process of forming a bipolar junction transistor (BJT) that includes forming a topology over a substrate. Thereafter, a spacer is formed at the topology. A base layer is formed from epitaxial silicon above the spacer and at the topology. A leakage block structure is formed in the substrate by out-diffusion from the spacer. Thereafter a BJT is completed with the base layer and the spacer.
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Ahmed Shahriar
Bohr Mark
Chambers Stephen
Green Richard
Murthy Anand
Intel Corporation
Vu David
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