Self-aligned coding process for mask ROM

Details Self-aligned coding process for mask ROM Self-aligned coding process for mask ROM

1994-06-23

1996-06-25

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 48, 437984, H01L 21266

Patent

active

055299423

ABSTRACT:
A ROM coding method with a self-aligned implantation. First, a non-coded mask ROM with a semiconductor substrate, a plurality of bit-lines formed on the semiconductor substrate, a gate oxide formed over the semiconductor substrate and the bit-line, and a plurality of word-lines formed above the gate oxide, which together form memory cells, is provided. Before the word-lines are formed, a barrier material is applied over spacing strips between the locations where the word-lines are to be formed. The barrier material serves as a mask through which impurities are implanted into the substrate to selectively program the memory cells to operate in either a first or second conduction state.

REFERENCES:
patent: 4513494 (1985-04-01), Batra
patent: 5081052 (1992-01-01), Kobayashi et al.
patent: 5278078 (1994-01-01), Kanebako et al.
patent: 5429967 (1995-07-01), Hong

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