Self-aligned charge storage region formation for...

Details Self-aligned charge storage region formation for... Self-aligned charge storage region formation for...

2011-04-26

2011-04-26

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S216000, C438S261000, C438S591000, C438S593000, C257SE21002, C257SE21180, C257SE21210, C257SE21423, C257SE21679

Reexamination Certificate

active

07932125

ABSTRACT:
Devices and methods for forming self-aligned charge storage regions are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a layer of a nitride film stacked between two oxide films on a semiconductor substrate, and forming a gate electrode on the layer of the nitride film stacked between the two oxide films. In addition, the method comprises removing side portions of the nitride film such that a central portion of the nitride film below a center portion of the gate electrode remains, oxidizing the central portion of the nitride film, and forming charge storage layers in the side portions of the nitride film, where the charge storage layers are separated by the central portion of the nitride film.

REFERENCES:
patent: 6538292 (2003-03-01), Chang et al.
patent: 7394702 (2008-07-01), Ding et al.
patent: 2008/0128789 (2008-06-01), Park et al.
patent: 2009/0206387 (2009-08-01), Kang et al.

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