Self-aligned buried channel/junction stacked gate flash memory c

Details Self-aligned buried channel/junction stacked gate flash memory c Self-aligned buried channel/junction stacked gate flash memory c

1994-09-01

1996-11-12

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular biasing

36518506, 36518511, 36518533, 257316, 257321, 257339, G11C 1604

Patent

active

055746853

ABSTRACT:
An improved one-transistor flash EEPROM cell structure and a method for making the same is provided so that the effective channel length dimension is independent of the critical dimensions of the stacked gate structure. The cell structure (210) includes an n.sup.- buried channel/junction region (216) which is implanted in a substrate (212) before formation of a tunnel oxide (226) and a stacked gate structure (234). After the formation of the stacked gate structure, a p-type drain region (222) is implanted with a large tilt angle in the substrate. Thereafter, n.sup.+ source and n.sup.+ drain regions (218, 224) are implanted in the substrate so as to be self-aligned to the stacked gate structure. The cell structure of the present invention facilitates scalability to small size and is useful in high density application.

REFERENCES:
patent: 4996571 (1991-02-01), Kume et al.
patent: 5021848 (1991-06-01), Chiu
patent: 5300802 (1994-04-01), Komori et al.
patent: 5337274 (1994-08-01), Ohji
patent: 5345104 (1994-09-01), Prall et al.
patent: 5455790 (1995-10-01), Hart et al.
patent: 5461249 (1995-10-01), Ozawa
patent: 5464999 (1995-11-01), Bergemont
patent: 5468981 (1995-11-01), Hsu
patent: 5477072 (1995-12-01), Goo

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