Self-aligned buried channel fabrication process

Details Self-aligned buried channel fabrication process Self-aligned buried channel fabrication process

1981-04-06

1983-05-03

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 29576E, 29576B, H01L 2120, H01L 2122

Patent

active

043819567

ABSTRACT:
A technique is described for the preparation of buried channels of arbitrary conductivity type in a semiconductor device or integrated circuit containing oxide moats in an epitaxial surface layer. By following a specific sequence of process steps, two mask layers are obtained from a single mask alignment step which permits adjacent regions in the substrate to be doped to different conductivity and type, if desired, prior to the growth of the epitaxial layer. The resulting epitaxial layer has an irregular surface pattern reflecting the shape of the buried structures to faciliate ready alignment with the mask pattern necessary for the production of oxide moats. The resulting structure has a channel buried under the oxide moat region which is used to inhibit the formation of parasitic channels or create a desired channel for device purposes.

REFERENCES:
patent: 4002511 (1977-01-01), Magdo et al.
patent: 4062699 (1977-12-01), Armstrong
patent: 4149915 (1979-04-01), Bohg et al.
patent: 4151010 (1979-04-01), Goth

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