Self-aligned bipolar transistor without spacers and method...

Details Self-aligned bipolar transistor without spacers and method... Self-aligned bipolar transistor without spacers and method...

2005-03-15

2005-03-15

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S198000, C257S592000

Reexamination Certificate

active

06867440

ABSTRACT:
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post situated on the top surface of the base. The bipolar transistor also comprises a conformal layer situated on a first and a second side of the sacrificial post, where the conformal layer is not separated from the first and second sides of the sacrificial post by spacers. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the sacrificial post, and the base. The sacrificial planarizing layer has a first thickness in a first region between the first and second sides of the sacrificial post and a second thickness in a second region outside of the first and second sides of the sacrificial post, where the second thickness is greater than the first thickness.

REFERENCES:
patent: 4068018 (1978-01-01), Hashimoto et al.
patent: 5093272 (1992-03-01), Hoepfner et al.
patent: 6459140 (2002-10-01), Johansson et al.
patent: 6534372 (2003-03-01), Racanelli
patent: 6784467 (2004-08-01), Kalburge et al.

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