Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-05-17
2005-05-17
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S019000, C257S361000, C257S362000, C257S557000, C257S565000, C438S279000, C438S321000
Reexamination Certificate
active
06894328
ABSTRACT:
According to one exemplary embodiment, a bipolar transistor includes a base having a top surface. The bipolar transistor further includes a first link spacer and a second link spacer situated on the top surface of the base. The bipolar transistor further includes a sacrificial post situated between the first and second link spacers, where the first and second link spacers have a height that is substantially less than a height of the sacrificial post. The bipolar transistor also includes a conformal layer situated over the sacrificial post and the first and second link spacers. According to this exemplary embodiment, the bipolar transistor further includes a sacrificial planarizing layer situated over the conformal layer, the first and second link spacers, the sacrificial post, and the base. The sacrificial planarizing layer may include, for example, an organic material such as an organic BARC (“bottom anti-reflective coating”).
REFERENCES:
patent: 4738624 (1988-04-01), Iyer et al.
patent: 5476801 (1995-12-01), Keshtbod
patent: 5488002 (1996-01-01), Kimura et al.
patent: 5629230 (1997-05-01), Fazan et al.
patent: 5985726 (1999-11-01), Yu et al.
patent: 6071767 (2000-06-01), Monkowski et al.
patent: 6074919 (2000-06-01), Gardner et al.
patent: 6117742 (2000-09-01), Gardner et al.
patent: 6200871 (2001-03-01), Moslehi
patent: 6245626 (2001-06-01), Chen et al.
patent: 6281447 (2001-08-01), Manning
patent: 6291354 (2001-09-01), Hsiao et al.
patent: 6329698 (2001-12-01), Koscielniak et al.
patent: 6403432 (2002-06-01), Yu et al.
patent: 6431005 (2002-08-01), Delaye
patent: 6576963 (2003-06-01), Jin et al.
patent: 6586307 (2003-07-01), Kalburge et al.
patent: 20020119631 (2002-08-01), Tseng
patent: 20020142551 (2002-10-01), Park et al.
patent: 20030075749 (2003-04-01), Keeth et al.
patent: 20030189239 (2003-10-01), Kalnitsky et al.
Kalburge Amol
Yin Kevin Q.
Farjami & Farjami LLP
Newport Fab LLC
Soward Ida M.
Zarabian Amir
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