Self aligned antiblooming structure for solid state image sensor

Fishing – trapping – and vermin destroying

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437931, 257223, 257230, H01L 2170, H01L 2700, H01L 27148, H01L 29768

Patent

active

055852980

ABSTRACT:
A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by photolithography. The self aligned, lateral-overflow drain (LOD) antiblooming structure results in a design that saves space, and hence, improves overall sensor performance. In this structure, an antiblooming potential barrier is provided that is smaller (in volts) than the barriers that separate the pixels from one another so that excess charge will flow preferentially into the LOD as opposed to the adjacent pixels.

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