Self-aligned alignment marks for phase-shifting masks

Details Self-aligned alignment marks for phase-shifting masks Self-aligned alignment marks for phase-shifting masks

1995-07-11

1997-05-27

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 356399, G03F 900

Patent

active

056331037

ABSTRACT:
A phase-shifting optical lithographic mask has a set of phase shifting features and a set of alignment marks, all having a common thickness and being made of a common material, such as chromium oxynitride, that is partially transparent to optical radiation used in an optical lithographic system. Both of these sets are located on a slab of quartz. An alignment shutter layer laterally intervenes between the alignment marks and the phase-shifting features, in order to suppress optical radiation leakage from the phase-shifting features to the alignment areas. A portion of the top surface of the alignment shutter layer and the entire top surface of the reinforced alignment marks are reinforced by an opaque layer, such as chrome. In addition, another similarly reinforced layer, a chip shutter layer, can be laterally located at an extremity of the reinforced alignment marks, in order to suppress optical radiation leakage from one chip area to another in step-and-repeat lithography.

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