Selectively Si-doped InAs/A1AsSb short-period-superlattices as N

Details Selectively Si-doped InAs/A1AsSb short-period-superlattices as N Selectively Si-doped InAs/A1AsSb short-period-superlattices as N

1995-06-06

1997-01-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 14, 257 15, H01S 319, H01L 2915

Patent

active

055947506

ABSTRACT:
A MWIR laser is provided having a novel n-type superlattice cladding layer comprising either InAs/AlAs.sub.0.16 Sb.sub.0.84 or In.sub.x Ga.sub.y Al.sub.1-x-y As/AlSb. The n-type superlattice cladding layer may comprise a Si selectively-doped (SD) InAs/AlAs.sub.0.16 Sb.sub.0.84 short-period superlattice (SPS) lattice-matched to an InAs substrate or a Si SD In.sub.x Ga.sub.y Al.sub.1-x-y As/AlSb SPS lattice-matched to a GaSb or InAs substrate. The advantages of the Si SD InAs/AlAs.sub.0.16 Sb.sub.0.84 SPS and Si SD In.sub.x Ga.sub.y Al.sub.1-x-y As/AlSb SPS include: (1) large dynamic range in the electron concentration in the Si-doped n-type cladding layer; and (2) strong hole confinement in the active region. Furthermore, the novel n-type superlattice cladding layer can be deposited without the use of tellurium (Te) which is not a preferred source material for MBE growth of III-V semiconductors.

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