Metal treatment – Compositions – Heat treating
Patent
1984-04-05
1986-04-08
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 29576B, 148187, 148DIG84, 357 231, 357 91, H01L 21265, H01L 2120
Patent
active
045810761
ABSTRACT:
Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium, disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination adversely affects the electrical properties of the substrate surface, particularly gallium arsenide substrates.
REFERENCES:
patent: 4297782 (1981-11-01), Ito
patent: 4298403 (1981-11-01), Davey et al.
patent: 4325747 (1982-04-01), Ristow
patent: 4330343 (1982-05-01), Christow et al.
patent: 4344980 (1982-08-01), Yoder
patent: 4421577 (1983-12-01), Spicer
patent: 4426765 (1984-01-01), Shahriary et al.
patent: 4473939 (1984-10-01), Feng et al.
Ishiwara et al., Proc. 1976 Int. Conf. on Solid St. Devices, Tokyo, Jap. J. Appl. Phys. 16 (1977) 53.
IT&T Industries, Inc.
Lenkszus Donald J.
Roy Upendra
LandOfFree
Selectively implanting GaAs semiconductor substrates through a m does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selectively implanting GaAs semiconductor substrates through a m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selectively implanting GaAs semiconductor substrates through a m will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2064114