Selectively formable vertical diode circuit element

Details Selectively formable vertical diode circuit element Selectively formable vertical diode circuit element

1986-05-16

1989-11-14

Sikes, William L.

357 15, 357 13, 357 51, 357 45, 357 59, H01L 2948, H01L 2991, H01L 2904, H01L 2710

Patent

active

048811149

ABSTRACT:
A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type.
A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.

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