Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2006-06-27
2006-06-27
Tran, Mai-Huong (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S245000, C438S607000, C257SE21586, C257S751000, C257S499000, C427S250000, C427S252000, C427S255150, C427S255230, C427S255260, C427S255280, C427S255700
Reexamination Certificate
active
07067351
ABSTRACT:
Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.
REFERENCES:
patent: 6902763 (2005-06-01), Elers et al.
Barbee, Jr. Troy W.
Lane Stephen M.
Surh Michael P.
Wilson William D.
The Regents of the University of California
Thompson Alan H.
Tran Mai-Huong
Wooldridge John P.
LandOfFree
Selectively-etched nanochannel electrophoretic and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selectively-etched nanochannel electrophoretic and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selectively-etched nanochannel electrophoretic and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3683756