Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-05-08
2007-05-08
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S531000, C257S532000, C257S750000, C257S758000, C257SE25015
Reexamination Certificate
active
10924346
ABSTRACT:
The present invention provides, in one embodiment, An integrated circuit device (100). The integrated circuit device (100) comprises a circuit feature (105) located over a semiconductor substrate (110) and an insulating layer (115) located over the circuit feature (105). A protective overcoat (120) is located over the insulating layer (115) and a metal structure (125) is located over the protective overcoat (120). The metal structure (125) is electrically connected to the circuit feature (105) by an interconnect (130). The metal structure (125) is coated with a conductive encasement (135), the conductive encasement (135) terminating at a perimeter (140) of the metal structure (125). Another embodiment of the invention in a method of manufacturing an integrated circuit device (200).
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Faust Richard A.
Park Young-Joon
Brady III W. James
Garner Jacqueline J.
Parekh Nitin
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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