Selectively doped trench device isolation

Details Selectively doped trench device isolation Selectively doped trench device isolation

2007-08-21

2007-08-21

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S374000

Reexamination Certificate

active

10920579

ABSTRACT:
A selectively doped trench isolation device is provided. The trench isolation device of the preferred embodiment includes a semiconductor substrate having a trench. A thin field oxide layer is grown on the side walls of the trench, and the trench is filled with a heavily doped polysilicon. The work function difference between the substrate and the heavily doped polysilicon increases the field threshold voltage of the gated trench isolation device so that smaller isolation structures can be formed between adjacent active devices in higher density integrated circuits.

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