Selectively bonded thin film layer and substrate layer for...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor

Reexamination Certificate

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C257S629000

Reexamination Certificate

active

07045878

ABSTRACT:
A layered structure generally includes a first layer suitable for having a useful element formed therein or thereon selectively attached or bonded to a second layer. A method to form a layered structure generally comprises selectively adhering a first substrate to a second substrate.

REFERENCES:
patent: 4309225 (1982-01-01), Fan et al.
patent: 4370176 (1983-01-01), Bruel
patent: 4371421 (1983-02-01), Fan et al.
patent: 4471003 (1984-09-01), Cann
patent: 4479846 (1984-10-01), Smith et al.
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4585945 (1986-04-01), Bruel et al.
patent: 4816420 (1989-03-01), Bozler et al.
patent: 4837182 (1989-06-01), Bozler et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 5273616 (1993-12-01), Bozler et al.
patent: 5362682 (1994-11-01), Bozler et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5453153 (1995-09-01), Fan et al.
patent: 5559043 (1996-09-01), Bruel
patent: 5588994 (1996-12-01), Bozler et al.
patent: 5676752 (1997-10-01), Bozler et al.
patent: 5710057 (1998-01-01), Kenney
patent: 5714395 (1998-02-01), Bruel
patent: 5793115 (1998-08-01), Zavracky et al.
patent: 5845123 (1998-12-01), Johnson et al.
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5882987 (1999-03-01), Srikrishnan
patent: 5897939 (1999-04-01), Deleonibus
patent: 5909627 (1999-06-01), Egloff
patent: 5920764 (1999-07-01), Hanson et al.
patent: 5933750 (1999-08-01), Wilson et al.
patent: 5976953 (1999-11-01), Zavracky et al.
patent: 5985688 (1999-11-01), Bruel
patent: 5993677 (1999-11-01), Biasse et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6027988 (2000-02-01), Cheung et al.
patent: 6033974 (2000-03-01), Henley et al.
patent: 6054363 (2000-04-01), Sakaguchi et al.
patent: 6054370 (2000-04-01), Doyle
patent: 6059877 (2000-05-01), Bruel
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6103597 (2000-08-01), Aspar et al.
patent: 6137110 (2000-10-01), Pellin et al.
patent: 6146979 (2000-11-01), Henley et al.
patent: 6155909 (2000-12-01), Henley et al.
patent: 6159323 (2000-12-01), Joly et al.
patent: 6159824 (2000-12-01), Henley et al.
patent: 6159825 (2000-12-01), Henley et al.
patent: 6162705 (2000-12-01), Henley et al.
patent: 6184060 (2001-02-01), Siniaguine
patent: 6184111 (2001-02-01), Henley et al.
patent: 6187110 (2001-02-01), Henley et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6190998 (2001-02-01), Bruel et al.
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6204151 (2001-03-01), Malik et al.
patent: 6214733 (2001-04-01), Sickmiller
patent: 6221738 (2001-04-01), Sakaguchi et al.
patent: 6221740 (2001-04-01), Bryan et al.
patent: 6221774 (2001-04-01), Malik
patent: 6225190 (2001-05-01), Bruel et al.
patent: 6225192 (2001-05-01), Aspar et al.
patent: 6232136 (2001-05-01), Zavracky et al.
patent: 6309945 (2001-10-01), Sato et al.
patent: 6387736 (2002-05-01), Cao et al.
patent: 0355913 (1990-02-01), None
patent: 01045448 (2000-10-01), None
patent: 63-155731 (1988-06-01), None
patent: WO 95/20824 (1995-08-01), None
patent: WO 98/20543 (1998-05-01), None
patent: WO 98/33209 (1998-07-01), None
patent: WO 99/05711 (1999-02-01), None
patent: WO 99/08316 (1999-02-01), None
patent: WO 99/35674 (1999-07-01), None
patent: WO 99/39377 (1999-08-01), None
patent: WO 99/66559 (1999-12-01), None
patent: WO 00/03429 (2000-01-01), None
patent: WO 00/24054 (2000-04-01), None
patent: WO 00/24059 (2000-04-01), None
patent: WO 00/46847 (2000-08-01), None
patent: WO 00/48238 (2000-08-01), None
patent: WO 00/75968 (2000-12-01), None
patent: WO 00/75995 (2000-12-01), None
patent: WO 01/03171 (2001-01-01), None
patent: WO 01/03172 (2001-01-01), None
Miller, D.L., et. al., “GaAs Peeled Film Solar Cells,” Rockwell International, pp. 1-45, Mar. 15, 1980-Dec. 31, 1981.
Fan, J.C.C., “Thin Films of III-V Compounds and Their Applications,” Journal de Physique, 43, pp. C1-327, (1982).
Konagai, Makoto, et al., “High Efficiency GaAs Thin Film Solar Cells by Peeled Film Technology”, Journal of Crystal Growth, vol. 45, pp. 277-280, 1978.
Bower, R.W., et al., “Aligned Wafer Bonding: A Key to Three Dimensional Microstructures,” Journal of Electronic Materials, vol. 20, No. 5, pp. 383-387, 1991.
Lee, K.Y., et al., “Fabrication of Ultrasmall Devices on Thin Activ GaAs Membranes,” J. Vac. Sci. Technol.B5 (1), pp. 322-325, 1987.
Camperi-Ginestet, C., “Alignable Epitaxial Liftoff of GaAs Materials With Selective Deposition Using Polyimide Diaphragms,” IEEE Transactions Photonics Technology Letters, pp. 1123-1126, Dec. 12, 1991.
Hargis, M.C., et al., “Epitaxial Lift-Off GaAS/A1GaAs Metal—Semiconductor-Metal Photodetectors with Back Passivaton,” IEEE Photonics Technology Letters, vol. 5, No. 10, pp. 1210-1212, 1993.
Schnitzer, L., et al., “Ultra-High Efficiency Light-Emitting-Diode Arrays,” IEEE Transactions on Electron Devices, vol. 40, No. 11, pp. 2108-2109, Nov. 1993.
Zhang, L., et. al., “Low-energy Separation By Implantation of Oxygen Structures Via Plasma Source Ion Implantation,” Applied Physics Lett., vol. 65, No. 8, pp. 962-964, Aug. 22, 1994.
Bengtsson, S., et al., “Silicon on Aluminum Nitride Structures Formed by Wafer Bonding,” Proceedings IEEE International SOI Conference, pp. 35-36, Oct. 1994.
Zahraman, K., et al., “Epitaxial Lift-Off in Photovoltaics: Ultra Thin Al0.2Ga0.8AsCell in a Mechanically Stacked (AL, Ga)As/Si Tandem,” First WCPEC, pp. 1898-1901, Dec. 5-9 1994.
Young, Paul G., et al., “RF Control of Epitaxial Lift-Off PHEMT's Under Backside Illumination,” IEEE Journal of Quantum Electronics, vol. 30, No. 8, pp. 1782-1786, Aug. 1994.
Hageman, P.R., et al., “Re-use of GAAS Substrates for Epitaxial Lift-Off III-V Solar Cells,” IEEE, pp. 1910-1913, 1994.
Wilkinson, Scott T., et al., “Integration of Thin Film Optoelectronic Devices onto Micromachined Movable Platforms,” IEEE Photonics Technology Letters, vol. 6, No. 9, 1115-1118, Sep. 1994.
Callahan, J., et al., “Alignable Lift-Off Transfer of Device Arrays Via A Single Polymeric Carrier Membrane,” IEEE, pp. 1274-1277, 1995.
Spiering, Vincent L., et al., “Sacrificial Wafer Bonding for Planarization After Very Deep Etching,” Journal of Microelectromechanical Systems, vol. 4, No. 3, pp. 151-157, Sep. 1995.
Bhattacharya, D., et al., “Optical Mixing in Epitaxial Lift-Off Pseudomorphic HEMT's,” IEEE Photonics Technology Letters, vol. 7, No. 10, pp. 1171-1173, Oct. 1995.
Hohkawa, K., et al., “Fabricatoin of Surface Acoustic Wave Semiconductor Coupled Devices Using Epitaxial Lift-off Technology,” IEEE Ultrasonics Symposium, pp. 401-404, 1995.
Fan, J.C., et al., “AlGAAs/GaAs Heterojunction Bipolar Transistors on Si Substrate Using Epitaxial Lift-Off,” IEEE Electron Device Letters, vol. 16, No. 9, pp. 393-395, Sep. 1995.
Shah, Divyang M., et al., “Epitaxial Lift-Off GaAs HEMT's,” IEEE Transactions on Electron Devices, vol. 42, No. 11, pp. 1877-1881, Nov. 1995.
Morf, T., et al., Integrating Optical Receiver Transplanted by Epitaxial Lift Off, IEEE, pp. 189-192, 1995.
Herrscher, M., “Epitaxial Liftoff In GaAs/InP MSM Photodetectors on Si,” Electronics Letters, vol. 31, No. 16, pp. 1383-1384, Aug. 3. 1995.
Omnes, et al., “Substrate Free GaAs Photovoltaic Cells on Pd-Coated Silicon with a 20% AM1.5 Efficiency,” IEEE Transactions on Electron Devices, vol. 43, No. 11, pp. 1806-1811 (Nov. 1996).
Jokerst. N.M., et al., “Thin-Film Multimaterial Optoelectronic Integrated Circuits,” IEEE Transactions on Components, Packaging, and Manufacturing Technology—Part B, vol. 19, No. 1, pp. 97-105, Feb. 1996.
Tong, Q.Y., et al., “Feasiblity Study of VLSI Device Layer Transfer by CMP PETEOS Direct Bonding,” Proceedings 1996 IEEE International SOI Conference, pp. 36-37, Oct. 1996.
Dohle, G. Rain

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