Selective thermal oxidation of As-containing compound semiconduc

Details Selective thermal oxidation of As-containing compound semiconduc Selective thermal oxidation of As-containing compound semiconduc

1978-07-11

1980-03-25

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 156662, 427 86, H01L 736, H01L 744

Patent

active

041949277

ABSTRACT:
In the process of forming a thermal oxide film or heat treatment of an oxide film in making a semiconductor device comprising a compound semiconductor of arsenic, the semiconductor is handled in an atmosphere containing arsenic oxide vapor in order to prevent evaporation of the arsenic tri-oxide in the thermal oxidation film or the oxide film under heat treatment, thereby to form a thermal oxide film having good chemical stability and good electrical characteristics, or to improve the oxide film so as to have good chemical stability and good electrical characteristics.

REFERENCES:
patent: 3798139 (1974-03-01), Schwartz
patent: 3856588 (1974-12-01), Hashimoto et al.
patent: 3890169 (1975-06-01), Schwartz et al.
patent: 3907616 (1975-09-01), Wiemer
patent: 3909321 (1975-09-01), Roberts
patent: 3992233 (1976-11-01), Farrow
patent: 4002505 (1977-01-01), Bult
patent: 4095004 (1978-06-01), Fraas et al.
Rubenstein, ". . Oxidation of . . . GaAs" J. Elechrochem. Soc. 113 (1966) 540.

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