Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-03-06
2009-06-16
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S700000
Reexamination Certificate
active
07547639
ABSTRACT:
A method of protecting a sensitive layer from harsh chemistries. The method includes forming a first sensitive layer, forming a second layer upon the first layer, then forming a third layer over the second layer. The third layer is utilized as a mask during patterning of the second layer. During patterning, however, the second layer is only partially etched, thus leaving a buffer layer overlying the first layer. The third layer is completely removed while the buffer layer protects the first layer from the harsh chemicals that are utilized to remove the third layer. Then, the buffer layer is carefully removed down to the surface of the first layer.
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Block Bruce A.
Brask Justin K.
Shah Uday
Blakely , Sokoloff, Taylor & Zafman LLP
Chen Kin-Chan
Intel Corporation
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