Selective spacer methodology for fabricating phase shift masks

Details Selective spacer methodology for fabricating phase shift masks Selective spacer methodology for fabricating phase shift masks

1999-06-30

2000-11-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, G03F 900

Patent

active

061533424

ABSTRACT:
A technique for fabricating a phase shift mask with multiple phase shifts by using self-aligned spacers to define phase shifting regions on a surface of a mask substrate. One or more of the phase shifting regions is/are defined by forming one or more self-aligned spacer(s). The spacers are selectively removed one at a time to expose an underlying portion of the mask substrate. The exposed portion of the mask substrate is etched to different depths to form the different phase shifters for the mask.

REFERENCES:
patent: 5976732 (1999-11-01), Pierrat et al.
patent: 5985492 (1999-11-01), Wheeler et al.

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