Selective silicon-on-insulator isolation structure and method

Details Selective silicon-on-insulator isolation structure and method Selective silicon-on-insulator isolation structure and method

2005-08-30

2005-08-30

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S296000, C438S424000, C438S435000

Reexamination Certificate

active

06936522

ABSTRACT:
A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

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