Selective removal of material by sputter etching

Details Selective removal of material by sputter etching Selective removal of material by sputter etching

1974-05-10

1976-03-09

Williams, Howard S.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

039430472

ABSTRACT:
During the removal of material selectively, by the sputter etching of the surface of a semiconductor wafer, the wafer is moved so as to produce a continuously varying angle of incidence between the ion beam and the wafer surface. There is also provided a field-free region adjoining the surface of the wafer which is being etched. As a consequence, the sputtering beam strikes the wafer surface over a range of angles which results in more complete removal of material, particularly material overlying stepped portions of the surface.

REFERENCES:
patent: 3325393 (1967-06-01), Darrow et al.
patent: 3361659 (1968-01-01), Bertelsen
patent: 3410775 (1968-11-01), Vratny
patent: 3526584 (1970-09-01), Shaw
patent: 3558351 (1971-01-01), Foster
patent: 3661760 (1972-05-01), Borgne et al.
patent: 3699034 (1972-10-01), Lins et al.
patent: 3730873 (1973-05-01), Pompei et al.
patent: 3820994 (1974-06-01), Lindberg et al.

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