Selective recrystallization to reduce P-channel transistor leaka

Details Selective recrystallization to reduce P-channel transistor leaka Selective recrystallization to reduce P-channel transistor leaka

1992-02-07

1994-03-29

Thomas, Tom

Fishing, trapping, and vermin destroying

437 24, 437 34, 437 40, 437 56, 437 57, 437 83, H01L 2170

Patent

active

052984346

ABSTRACT:
A preamorphized silicon layer formed atop a sapphire substrate is selectively recrystallized such that the original degraded quality of the crystallinity of an N-well region where a P-channel device is to be formed is enhanced, so that leakage in the P-channel device is reduced, while the high UVR number of a P-well region where an N-channel device resides remains unaffected. The process according to the present invention involves implanting a recrystallization-inducing element, such as silicon, into only that portion of the preamorphized silicon layer where an N-conductivity well region for a P-channel device is to be formed. An N-conductivity type impurity is introduced into the silicon-implanted portion of the preamorphized silicon layer, to form the N-conductivity well region. The structure is then annealed at a relatively low temperature for several minutes, which is sufficient to activate the phosphorus and to cause local recrystallization of the N-well region of the silicon layer, without essentially causing a redistribution of the phosphorus. What results is a precisely tailored, low leakage P-channel device with a very close to ideal characteristic, integrated in the same SOS structure with a high UVR-based N-channel device.

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