Selective polish process for titanium, titanium nitride, tantalu

Details Selective polish process for titanium, titanium nitride, tantalu Selective polish process for titanium, titanium nitride, tantalu

1995-12-06

1997-10-14

Rose, Robert A.

Abrading

Abrading process

Combined abrading

451 59, 451 37, 451 41, 1566361, B24B 100

Patent

active

056765878

ABSTRACT:
An improved Chemical Mechanical Planarization (CMP) method is provided for selectively removing a layer of metallization material such as tungsten or copper and a liner film such as Ti/Tin or Ta/TaN from the surface of an oxide layer of a semiconductor wafer. The method includes removing the metallization and liner layers with a first removal process which utilizes CMP polishing and an alumina-based slurry. The first removal process is stopped after the metallization layer is completely removed and before the liner film is completely removed. The remainder of the liner film is removed using a second removal process which includes CMP polishing using a neutral pH silica-based slurry which is selective to the liner film.

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