Selective plasma etching and deposition

Details Selective plasma etching and deposition Selective plasma etching and deposition

1974-05-03

1976-02-24

Newsome, J. H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156 7, 156 8, 156 17, 427 41, 427271, B05D 306

Patent

active

039405060

ABSTRACT:
This invention relates to a method of selectively treating the surface of an article comprising silicon in part and either silica or silicon nitride in part wherein either the silicon or the silicon compound is etched at a greater rate or a fluoropolymer is deposited on the article by placing the article in a plasma containing fluorine, carbon and reducing species and adjusting the concentration of the reducing species to selectively etch the silicon at a greater rate, etch the silicon compound at a greater rate or deposit polymer.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3795557 (1974-03-01), Jacob

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