Selective plasma deposition

Details Selective plasma deposition Selective plasma deposition

1996-10-03

1999-01-12

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427526, 427530, 427531, 427570, 427577, 427576, 20419216, 20419217, 2041923, C23C 1400, C23C 1404, C23C 1414, H05H 102

Patent

active

058584714

ABSTRACT:
A deposition process provides selective areal deposition on a substrate surface having separate areas of different materials comprises forming a plasma over the substrate, injecting coating species into the plasma by either of sputtering or gaseous injection, adding a reactive gas for altering surface binding energy at the coating surface, and biasing the substrate during deposition to bombard the substrate with ionic species from the plasma. Surface binding energy is altered, in the general case, differently for the separate areas, enhancing selectivity. Bias power is managed to exploit the alteration in surface binding energy. In the case of gaseous injection of the coating species, and in some cases of sputtering provision of the coating material, the temperature of the substrate surface is managed as well. In an alternative embodiment, selectivity is to phase of the coating material rather than to specific areas on the substrate, and a selected phase may be preferentially deposited on the substrate.

REFERENCES:
patent: 4419203 (1983-12-01), Gibson
patent: 4613400 (1986-09-01), Tam et al.
patent: 4629635 (1986-12-01), Brors
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4790920 (1988-12-01), Krzanich
patent: 4816294 (1989-03-01), Tsuo et al.
patent: 4842710 (1989-06-01), Freller et al.
patent: 4957604 (1990-09-01), Steininger
patent: 4959136 (1990-09-01), Hatwar
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4969415 (1990-11-01), Bartha et al.
patent: 4980197 (1990-12-01), Suhr et al.
patent: 4981923 (1991-01-01), Hirase et al.
patent: 5093151 (1992-03-01), van der Berg et al.
patent: 5108569 (1992-04-01), Gilboa et al.
patent: 5122249 (1992-06-01), Niemann et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5175017 (1992-12-01), Kobayashi et al.
patent: 5207836 (1993-05-01), Chang
patent: 5221640 (1993-06-01), Sato
patent: 5246741 (1993-09-01), Ouhata et al.
patent: 5286676 (1994-02-01), Kruger et al.
patent: 5364664 (1994-11-01), Tsubouchi et al.
patent: 5368937 (1994-11-01), Itoh
patent: 5393699 (1995-02-01), Mikoshiba et al.
patent: 5656337 (1997-08-01), Park et al.
patent: 5712000 (1998-01-01), Wei et al.
patent: 5783282 (1998-07-01), Leiphart
Skelly et al, "Significant Improvement in Step Coverage Using Bias Sputtered Aluminum", J. Vac. Sci. Technol. A 4(3) pp. 457-460, May/Jun. 1986.
Homma et al, "Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias", J. Electrochem. Soc., Solid State Sci. & Technol. vol. 132 #6 pp. 1466-1472, Jun. 1985.
Yamazaki et al "Selective CVD Tungsten . . . " Jun. 12-13, 1989 VMIC Conference, IEEE pp. 151-157.

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