Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-06-07
2005-06-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S081000, C257S082000
Reexamination Certificate
active
06903376
ABSTRACT:
In accordance with embodiments of the invention, a light emitting device includes a light emitting region and a reflective contact separated from the light emitting region by one or more layers. In a first embodiment, the separation between the light emitting region and the reflective contact is between about 0.5λnand about 0.9λn, where λnis the wavelength of radiation emitted from the light emitting region in an area of the device separating the light emitting region and the reflective contact. In a second embodiment, the separation between the light emitting region and the reflective contact is between about λnand about 1.4λn. The light emitting region may be, for example, III-nitride, III-phosphide, or any other suitable material.
REFERENCES:
patent: 3813587 (1974-05-01), Umeda et al.
patent: 4238707 (1980-12-01), Malissin et al.
patent: 4329625 (1982-05-01), Nishizawa et al.
patent: 4423478 (1983-12-01), Bullock et al.
patent: 4983884 (1991-01-01), Wychulis
patent: 5362977 (1994-11-01), Hunt et al.
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5410159 (1995-04-01), Sugawara et al.
patent: 5461425 (1995-10-01), Fowler et al.
patent: 5557115 (1996-09-01), Shakuda
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5744829 (1998-04-01), Murasato et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5862167 (1999-01-01), Sassa et al.
patent: 5886401 (1999-03-01), Liu
patent: 5914501 (1999-06-01), Antle et al.
patent: 5959401 (1999-09-01), Asami et al.
patent: 5998232 (1999-12-01), Maruska
patent: 6016038 (2000-01-01), Mueller et al.
patent: RE36747 (2000-06-01), Manabe et al.
patent: 6081540 (2000-06-01), Nakatsu
patent: 6091085 (2000-07-01), Lester
patent: 6121127 (2000-09-01), Shibata et al.
patent: 6133589 (2000-10-01), Krames et al.
patent: 6150774 (2000-11-01), Mueller et al.
patent: 6169294 (2001-01-01), Biing-Jye et al.
patent: 2002/0047131 (2002-04-01), Ludowise et al.
patent: 197 56856 (1997-12-01), None
patent: 199 21 987 (1999-11-01), None
patent: 0 550 963 (1993-07-01), None
patent: 0 702414 (1996-03-01), None
patent: 0 772 249 (1997-05-01), None
patent: 0 772 249 (1998-11-01), None
patent: 0 921577 (1999-06-01), None
patent: 0 926 744 (1999-06-01), None
patent: 0 926 744 (2000-05-01), None
patent: 1 020 935 (2000-07-01), None
patent: 1 030 377 (2000-08-01), None
patent: 2 301934 (1996-12-01), None
patent: 2 343 994 (2000-05-01), None
patent: 0 529 1621 (1993-11-01), None
patent: 7 235 624 (1995-09-01), None
patent: 11 150 297 (1999-06-01), None
patent: 11 191 641 (1999-07-01), None
patent: 11 274568 (1999-10-01), None
Evans et al., “Edge-Emitting Quantum Well Heterostructure Laser Diodes with Auxiliary Native-Oxide Vertical Cavity Confinement,”Applied Physics Letters, 67(1995) Nov. 20, No. 21, pp. 3168-3170.
Han, H. et al.: “Electroplated Solder Joints for Optoelectronic Applications” Electronic Components & Technology, 1996, pp. 963-966, XP000646645.
“Barrier Layer in the metallisation of Semiconductor Diodes Lasers” Research Disclosure, Kenneth Mason Publications, Hampshire, 1994, No. 360, p. 179, XP000446545, ISSN: 0374-4353.
Krames et al., “High-Power Truncated-Inverted-Pyramid (A1xGa1-x) 0.5In0.5P/GaP Light-Emitting Diodes Exhibiting>50% External Quantum Efficiency”, Applied Physics Letter, vol. 75, No. 16, Oct. 18, 1999, pp. 2365-2367.
Roger Maxwell, “LED or Lamp Flasher: Minimum parts counting Designed for 3V battery operation”, http:/www.ee.washington.edu/circuit_archive/circuits.
Mensz, P.M. et al.: “InxGa1-xN/A1yGa1-yN violet light emitting diodes with reflective p-contacts for high single sided light extraction” Electronics Letters, GB, IEE Stevenage, vol. 33, No. 24, Nov. 20, 1997, pp. 2066-2068, XP000734311, ISSN: 0013-5194.
G. J. Sun and K. H. Chae, “Properties of 2,3-butanedione and 1-phenyl-1,2-propanedione As New Photosensitizers For Visible Light Cured Dental Resin Composites”, Polymer, vol. 41, pp. 6205-6212 (2000).
Tan, Q. et al.: “Soldering technology for Optoelectronic Packaging” Electronic Components & Technology, 1996, pp. 26-36, XP000646646.
Sugawara, H. et al, “Emission Properties of InGaAIP, Visible Light-Emitting Diodes Employing a Multiquatum-Well Active Layer”, Jpn. J. Appl. Phys., vol. 33 (1994) Pt. 1, No. 10, Oct. 1994, pp. 5784-5787.
Chang, S. J., et al., “A1GainP multiquantum well light-emitting diodes”IEE Proc.-Optoelectron, vol. 144, No. 6, Dec. 1997, pp. 405-409.
Benisty, H., “Impact of Planar Microcavity Effects on Light Extraction-Part I: Basic Concepts and Analytical Trends”, IEE Journal of Quantum Electronics, vol. 34, No. 9, Sep. 1998, pp. 1612-1631.
Yu-Chen Shen et al., “Selective Placement of Quantum Wells in FlipChip Light Emitting Diodes for Improved Light Extraction”, Patent Application No. 10/158,360, filed May 29, 2002.
Krames Michael R.
Ludowise Michael J.
Shen Yu-Chen
Leiterman Rachel V.
Lumileds Lighting U.S. LLC
Nelms David
Nguyen Thinh T
Patent Law Group LLP
LandOfFree
Selective placement of quantum wells in flipchip light... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selective placement of quantum wells in flipchip light..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective placement of quantum wells in flipchip light... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3511492