Selective patterning of metallization on a dielectric substrate

Details Selective patterning of metallization on a dielectric substrate Selective patterning of metallization on a dielectric substrate

1992-12-04

1998-11-03

King, Roy V.

Coating processes

Nonuniform coating

Deforming the base or coating or removing a portion of the...

427437, 427438, 427304, 427305, 427307, 427250, 427124, 427 96, 427 98, 427125, 20419215, B05D 132

Patent

active

058305335

ABSTRACT:
A method of selectively fabricating metallization on a dielectric substrate is disclosed. A seed layer is sputtered on a polymer dielectric, a patterned photoresist mask is disposed over the seed layer, exposed portions of the seed layer are etched, the photoresist is stripped, and copper is deposited without a mask by electroless plating on the unetched seed layer to form well-adhering high density copper lines without exposing the photoresist to the electroless bath.

REFERENCES:
patent: 3664899 (1972-05-01), Wright et al.
patent: 4193849 (1980-03-01), Sato
patent: 4388351 (1983-06-01), Sawyer
patent: 4451554 (1984-05-01), Kishi et al.
patent: 4582564 (1986-04-01), Shanefield
patent: 4701351 (1987-10-01), Jackson
patent: 4869930 (1989-09-01), Clarke
patent: 4981715 (1991-01-01), Hirsch et al.
Vossen et al, "Thin Film Processes", Academic Press, New York, 1978 pp. 315-317.

Affiliated with

Also associated with

Rating

Selective patterning of metallization on a dielectric substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective patterning of metallization on a dielectric substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective patterning of metallization on a dielectric substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-687070