Selective oxidation of silicon trench sidewall

Details Selective oxidation of silicon trench sidewall Selective oxidation of silicon trench sidewall

1992-08-12

1993-08-31

Thomas, Tom

Fishing, trapping, and vermin destroying

437 69, 437979, 148DIG50, 148DIG117, 148DIG163, H01L 2176

Patent

active

052408752

ABSTRACT:
The present invention is directed to a technique for selectively oxidizing trench side walls in a silicon substrate. Each of the side walls can be oxidized individually and to different thicknesses according to the requirements of the trench IC.

REFERENCES:
patent: 4437226 (1984-03-01), Soclof
patent: 4514251 (1985-04-01), Van Ommen et al.
patent: 4756793 (1988-07-01), Peek
patent: 4772569 (1988-09-01), Ishii et al.
patent: 5182227 (1993-01-01), Matsukawa

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