Selective oxidation method

Details Selective oxidation method Selective oxidation method

1975-09-08

1977-08-16

Powell, William A.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156648, 156653, 156656, 156657, 357 50, H01L 21306, H01L 21312

Patent

active

040427269

ABSTRACT:
A method for manufacturing a semiconductor device wherein semiconductor material is selectively removed from a principal surface of a semiconductor substrate having at least one semiconductor layer formed thereon to provide a groove that extends through said layer and into the substrate and wherein the semiconductor material of the substrate is selectively oxidized to form an oxide insulator layer within the groove. The groove has a width which is smaller than the thickness of the semiconductor layer and the oxide insulator layer serves to isolate a portion of the semiconductor layer from adjacent portions of the substrate.

REFERENCES:
patent: 3290753 (1966-12-01), Chang
patent: 3488564 (1970-01-01), Crafts
patent: 3700497 (1972-10-01), Epifano et al.
patent: 3772577 (1973-11-01), Planey
patent: 3810796 (1974-05-01), Skaggs et al.
patent: 3920861 (1975-11-01), Dean
patent: 3966577 (1976-06-01), Hochberg

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