Selective open tube aluminum diffusion

Details Selective open tube aluminum diffusion Selective open tube aluminum diffusion

1978-09-18

1980-02-12

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148189, H01L 2122

Patent

active

041882458

ABSTRACT:
A method for selectively diffusing a semiconductor body with p-conductivity type impurities utilizing aluminum as a diffusion source and able to be performed in a reuseable open diffusion tube is described. A gas flow is established in the diffusion tube which is essentially an inert gas and includes from one to ten percent oxygen. Simultaneous blanket and selective diffusions may be formed in accordance with this invention by modifying the amount of oxygen in the flow.

REFERENCES:
patent: 3972838 (1976-08-01), Yamashita
patent: 4040878 (1977-08-01), Rowe

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