Selective OMCVD growth of compound semiconductor materials on si

Details Selective OMCVD growth of compound semiconductor materials on si Selective OMCVD growth of compound semiconductor materials on si

1987-11-13

1989-05-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG29, 148DIG72, 148DIG110, 148DIG169, 148DIG57, 148 332, 156613, 437 90, 437126, 437132, 437939, 437946, H01L 21205, H01L 736

Patent

active

048267848

ABSTRACT:
A method of OMCVD heteroepitaxy of III/V (GaAs) material on a patterned Si substrate is described wherein heteroepitaxy deposition occurs only on the exposed Si surfaces and nowhere else.

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