Selective NIPI doping super lattice contacts and other semicondu

Details Selective NIPI doping super lattice contacts and other semicondu Selective NIPI doping super lattice contacts and other semicondu

1989-01-17

1989-11-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG41, 148DIG72, 148DIG104, 148DIG160, 148DIG169, 156612, 357 16, 437 80, 437105, 437107, 437133, 437948, H01L 2120, H01L 21203

Patent

active

048837709

ABSTRACT:
A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have selective contacts that are far superior to those which can be produced at present. This technique can also produce a wide variety of NIPI devices as well as other types of IC structures.

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patent: 4470192 (1984-09-01), Miller
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