Selective metal wiring and plug process

Details Selective metal wiring and plug process Selective metal wiring and plug process

1995-05-25

1996-01-16

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437192, 437203, 437231, H01L 2144

Patent

active

054847478

ABSTRACT:
A structure and method are provided for forming a plug contact and a metal line pattern in a semiconductor device. A contact hole is etched through a first dielectric layer. A second dielectric layer is formed overlying the first layer having first opening that defines a first metal layer and plug contact. A nucleation layer, such as Ti/TiN or Ti/TiW, is formed on the exposed surfaces of the contact hole and first opening. A planarizing layer is formed which fills the contact hole, and at least partially fills the first openings thereby masking portions of the nucleation layer. Unmasked portions of the nucleation layer are removed and then the planarizing layer is removed. A metal is selectively deposited on the remaining nucleation layer portions to fill the contact hole and substantially filling the first opening. The metal in the first opening forms a plug contact to the bottom surface and a metal line pattern. This process has the advantages of forming two metal levels--i.e., the plug contact and the first metal pattern--with one deposition process as well as defining the metal lines using a selective deposition, not a metal photo/etch process.

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