Selective metal deposition process

Details Selective metal deposition process Selective metal deposition process

1988-10-03

1989-08-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437187, 437189, 437200, 148DIG147, H01L 2100, H01L 2102, H01L 21285, H01L 2188

Patent

active

048533475

ABSTRACT:
A method for the selective deposition of metals in semiconductor device manufacturing wherein a wafer surface is subjected to a hydrogen species that reduces oxidation on conducting materials while also removing impurities from non-conducting materials. Metals are then selectively deposited upon the conducting materials and not upon the non-conducting materials. It should be understood that the hydrogen treatment step and the selective metal deposition step may be performed simultaneously or by using two separate processing steps.

REFERENCES:
patent: 4517225 (1985-05-01), Broadbent
patent: 4766006 (1988-08-01), Gaczi
Wolf, S.; Silicon Processing for the VLSI Era, Chaps 6, 12 & 16, Lattice Press, 1986.

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