Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-03-29
2011-03-29
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21576, C438S674000
Reexamination Certificate
active
07915735
ABSTRACT:
Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over the substrate layer.
REFERENCES:
patent: 6037664 (2000-03-01), Zhao et al.
patent: 6110826 (2000-08-01), Lou et al.
patent: 6326296 (2001-12-01), Tsai et al.
patent: 6353269 (2002-03-01), Huang
patent: 6417094 (2002-07-01), Zhao et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6682989 (2004-01-01), Goodner et al.
patent: 6734097 (2004-05-01), Iggulden et al.
patent: 6803300 (2004-10-01), Higashi et al.
patent: 6872659 (2005-03-01), Sinha
patent: 6878616 (2005-04-01), Casey et al.
patent: 6900128 (2005-05-01), Sinha
patent: 6933230 (2005-08-01), Dubin
patent: 6949829 (2005-09-01), Akahori et al.
patent: 2002/0063338 (2002-05-01), Mikami et al.
patent: 2002/0074309 (2002-06-01), Bjorkman et al.
patent: 2002/0084257 (2002-07-01), Bjorkman et al.
patent: 2002/0094674 (2002-07-01), Bao et al.
patent: 2002/0119327 (2002-08-01), Arkles et al.
patent: 2003/0008493 (2003-01-01), Lee
patent: 2004/0018748 (2004-01-01), Lu et al.
patent: 2004/0021188 (2004-02-01), Low et al.
patent: 2004/0058538 (2004-03-01), Park et al.
patent: 2004/0137161 (2004-07-01), Segawa et al.
patent: 2005/0170642 (2005-08-01), Hineman et al.
patent: 2005/0181633 (2005-08-01), Hochberg et al.
patent: 2006/0022228 (2006-02-01), Hoshi et al.
patent: 2006/0043510 (2006-03-01), Yamazaki et al.
patent: 2007/0190800 (2007-08-01), Rantala
Morgan Paul
Sinha Nishant
Anya Igwe U
Bryant Kiesha R
Micro)n Technology, Inc.
Wells St. John P.S.
LandOfFree
Selective metal deposition over dielectric layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selective metal deposition over dielectric layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective metal deposition over dielectric layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2691470