Selective LPCVD tungsten deposition by the silicon reduction met

Details Selective LPCVD tungsten deposition by the silicon reduction met Selective LPCVD tungsten deposition by the silicon reduction met

1983-08-08

1985-09-10

Lusignan, Michael R.

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427 38, 427 39, 427404, B05D 306, C23C 1100, C23C 1300

Patent

active

045406073

ABSTRACT:
A method is described for treating the surface of a field-effect transistor or a Schottky barrier diode. A polysilicon surface of a gate region of an FET or a single crystalline silicon surface of a Schottky barrier diode may be treated with a low-power argon-plasma for a relatively short period of time to enhance nucleation sites on the surface of the polysilicon or single crystalline silicon. A layer of tungsten or molybdenum may be selectively deposited on the surface of the polysilicon or single crystalline silicon by chemical-vapor deposition through silicon reduction of tungsten hexafluoride or molybdenum hexafluoride.

REFERENCES:
patent: 3061463 (1962-10-01), Samuel
patent: 3543386 (1970-12-01), Inoue et al.
patent: 3697343 (1972-10-01), Cuomo et al.
patent: 3784369 (1974-01-01), Svanstrom
patent: 3911194 (1975-10-01), Dejachy et al.
patent: 4198449 (1980-04-01), Freller et al.
patent: 4362564 (1982-12-01), Danko
patent: 4364969 (1982-12-01), Dearnaley et al.
patent: 4402771 (1983-09-01), Thomas
patent: 4422897 (1983-12-01), Horwitz
Morosanu et al., "Kinetics and Properties of Chemically Vapour-Deposited Tungsten Films on Silicon Substrates," Thin Solid Films, 52, (1978), 181-194.
Miller et al., "Hot-Wall CVD Tungsten for VLSI," Solid State Technology, 79-82, (1980).
Broadbent et al., "Selective Low Presssure Chemical Vapor Deposition of Tungsten, " Extended Abstracts, The Electrochemical Society Spring Meeting, San Francisco, CA, Abstract 420, (1983).
Gargini, "Tungsten Barrier Eliminates VLSI Circuit Shorts," Industrial Research & Development, 141-147, (1983).

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