Selective LPCVD tungsten deposition by nitridation of a dielectr

Details Selective LPCVD tungsten deposition by nitridation of a dielectr Selective LPCVD tungsten deposition by nitridation of a dielectr

1987-03-02

1988-04-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437203, 437242, 437245, 148DIG112, H01L 21443

Patent

active

047404833

ABSTRACT:
A process for selective deposition of a refractory metal such as tungsten at high temperatures and low pressure via chemical vapor deposition during semiconductor device manufacturing is provided. A dielectric layer is nitrided by chemical deposition of a nitrogen bearing gas prior to LPCVD deposition of tungsten for purposes such as contact metallization of current conducting electrodes and current controlling electrodes of transistors. Since nitridation of the dielectric is a surface chemical reaction and not an addition of material to the dielectric, no additional complexity is introduced into the LPCVD process. The refractory metal does not substantially deposit on the nitrided dielectric thereby providing selective metal deposition.

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Levy et al., J. Electrochem. Soc.: Solid-State Sci. and Tech., v. 133, No. 9 (Sep. 1986), pp. 1905-1912.

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