Selective links in silicon hetero-junction bipolar...

Details Selective links in silicon hetero-junction bipolar... Selective links in silicon hetero-junction bipolar...

2008-05-27

2008-05-27

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming base region of specified dopant concentration profile

C438S321000, C438S363000, C438S372000, C257SE21379

Reexamination Certificate

active

11308503

ABSTRACT:
Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic base including a first N-type dopant species, germanium and carbon; forming an N-type extrinsic base over a first region and a second region of the intrinsic base, the first region over the collector and the second region over a dielectric adjacent to the collector, the N-type extrinsic base containing or not containing carbon; and forming a P-type emitter on the first region of the intrinsic base.

REFERENCES:
patent: 6642096 (2003-11-01), Dutartre et al.
patent: 6667489 (2003-12-01), Suzumura et al.
patent: 6852602 (2005-02-01), Kanzawa et al.
patent: 2002/0192918 (2002-12-01), Takagi et al.
patent: 2003/0189239 (2003-10-01), Kalnitsky et al.

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