Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1977-05-06
1978-09-05
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 29578, 29580, 148174, 156612, 156650, 156653, 156657, 156662, 357 15, 357 22, 357 23, 357 56, 357 59, 357 61, H01L 2120, H01L 21306
Patent
active
041117255
ABSTRACT:
MBE growth of epitaxial layers on selected areas of a growth surface (e.g., wafer or epi-layer grown thereon) is achieved by masking portions of the surface with an amorphous material and directing molecular beams at the masked surface so that a polycrystalline layer deposits on the mask and an epi-layer grows in the unmasked zones. The mask material is then exposed to a suitable etchant effective to dissolve that material, lift-off the polycrystalline layer and expose the underlying surface. Self-aligned contacts can be fabricated by depositing a metal layer prior to etching. Subsequent lift-off removes both the polycrystalline layer and the overlying metal. This process can be utilized in the fabrication of FETs and opto-electronic devices such as double heterostructure junction lasers.
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Cho Alfred Yi
DiLorenzo James Vincent
Mahoney Gerard Edward
Bell Telephone Laboratories Incorporated
Rutledge L. Dewayne
Saba W.G.
Urbano Michael J.
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