Selective irradiation of thyristors

Details Selective irradiation of thyristors Selective irradiation of thyristors

1977-09-02

1979-01-16

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357;91, H01L 21263, H01L 754, H01L 2122

Patent

active

041347781

ABSTRACT:
The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the boundaries between conducting portions and between the gate and the conducting portions.

REFERENCES:
patent: 3442722 (1969-05-01), Bauerlein et al.
patent: 3864174 (1975-02-01), Akiyama et al.
patent: 3877997 (1975-04-01), Brown
patent: 3881963 (1975-05-01), Chu et al.
patent: 3881964 (1975-05-01), Cresswell et al.
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patent: 3933527 (1976-01-01), Tarneja et al.
patent: 3943013 (1976-03-01), Kennedy et al.
patent: 4043837 (1977-08-01), Cresswell et al.
patent: 4047976 (1977-09-01), Bledsoe et al.
patent: 4056408 (1977-11-01), Bartko et al.
Rai-Choudhary et al., "Electron Irradiation . . . in Si . . . "., IEEE Trans. Electr. Device, ED-23 (1976) 814.

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